CMOS process flow_ILD and contact hole/Metal

(7) ILD and contact hole

1) Inter-layer dielectric (ILD) deposition

- PECVD

2) ILD CMP

4) Photolithography

- 목적) 금속이 들어가야하는 부분 노출 => via, contact hole

5) SiO2 etching

- Dry etching (an-isotropic RIE)

6) PR strip

 

(8) Metal

1) Barrier metal deposition

2) Metal depositon

- PVD

3) Photolithography

4) Metal etching

- Dry etching (an-isotropic RIE)

5) PR strip

- Oxygen plasma ashing

 

+ IMD (Inter-Metal Dielectric)

=> PAD deposition

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